JOPSS - Search Results

Search Results: Records 1-4 displayed on this page of 4

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Journal Articles

Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Kojima, Kazutoshi; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei; Ishida, Yuki*

Materials Science Forum, 338-342, p.1129 - 1132, 2000/00

no abstracts in English

Journal Articles

Characterizatin of Au Schottky contacts on p-type 3C-SiC grown by low pressure chemical vapor deposition

Kojima, Kazutoshi; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei

Materials Science Forum, 338-342, p.1239 - 1242, 2000/00

no abstracts in English

Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Journal Articles

Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

Materials Science Forum, 338-342, p.1299 - 1302, 2000/00

no abstracts in English